VS-50RIA Series

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Vishay Semiconductors

Revision: 11-Mar-14

5

Document Number: 93711

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 7 - Forward Voltage Drop Characteristics

Fig. 9 - Gate Characteristics

1

10

100

1000

0.5

1

1.5

2

2.5

3

3.5

4

4.5

T = 25°C

J

Instantaneous On-state Voltage (V)

T = 125°C

J

50RIA Series

0.01

0.1

1

0.001

0.01

0.1

1

10

Square Wave Pulse Duration (s)

Steady State Value

R

= 0.35 K/W

thJ-hs

50RIA Series

0.1

1

10

100

0.001

0.01

0.1

1

10

100

1000

VGD

IGD

(b)

(a)

(1) (2)

Instantaneous Gate Current (A)

a) Recommended load line for

b) Recommended load line for

tr<=1 µs

Rectangular gate pulse

rated di/dt : 20V, 30 ohms; tr<=0.5 µs

<=30% rated di/dt : 20V, 65 ohms

(1) PGM = 10W, tp = 5ms

(2) PGM = 20W, tp = 2.5ms

(3) PGM = 50W, tp = 1ms

(4) PGM = 100W, tp = 500µs

(3) (4)

50RIA Series

Frequency Limited by PG(AV)