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VS-P105 Datasheet(PDF) 3 Page - Vishay Siliconix |
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VS-P105 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 9 page VS-P100 Series www.vishay.com Vishay Semiconductors Revision: 27-Mar-14 3 Document Number: 93754 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) A mounting compound is recommended and the torque should be checked after a period of 3 hours to allow for the spread of the compound Fig. 1 - Current Ratings Nomogram (1 Module Per Heatsink) Fig. 2 - On-State Power Loss Characteristics Fig. 3 - On-State Power Loss Characteristics THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction operating and storage temperature range TJ, TStg -40 to 125 °C Maximum thermal resistance, junction to case per junction RthJC DC operation 2.24 K/W Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.10 Mounting torque, base to heatsink (1) 4Nm Approximate weight 58 g 2.0 oz. Case style PACE-PAK (D-19) Total Output Current (A) 510 15 20 25 0 0 60 50 40 30 20 10 93754_01a ~ + - 180° (sine) T J = 125 °C Maximum Allowable Ambient Temperature (°C) 25 75 50 100 125 0 60 50 40 30 20 10 0 93754_01b R th SA = 15 K/W - Δ R 2 K/W 3 K/W 7 K/W 10 K/W 5 K/W Average On-State Current (A) 10 15 05 15 10 5 0 93754_02 180° 120° 90° 60° 30° RMS limit Ø Conduction angle T J = 125 °C Per junction Average On-State Current (A) 20 010 15 5 20 10 15 5 0 93754_03 DC 180° 120° 90° 60° 30° RMS limit T J = 125 °C Per junction Conduction period Ø |
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