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TSM1N80CWRPG Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM1N80CWRPG Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 7 page TSM1N80 Taiwan Semiconductor Document Number: DS_P0000037 1 Version: B15 N-Channel Power MOSFET 800V, 0.3A, 21.6Ω FEATURES ● Advanced planar process ● 100% avalanche tested ● Fast switching APPLICATION ● Power Supply ● Lighting KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 800 V RDS(on) (max) 21.6 Ω Qg 5 nC SOT-223 Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 800 V Gate-Source Voltage VGS ±30 V Continuous Drain Current ID 0.3 A Pulsed Drain Current (Note 1) IDM 1 A Single Pulse Avalanche Energy (Note 2) EAS 90 mJ Avalanche Current, Repetitive or Not-Repetitive (Note 1) IAR 1 A Total Power Dissipation @ TC = 25°C PDTOT 2.1 W Operating Junction Temperature TJ 150 °C Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 °C THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Ambient Thermal Resistance RӨJA 60 °C/W Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air |
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