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TSM2N60ECHC5G Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM2N60ECHC5G Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 7 page  TSM2N60E 600V, 2A, 4 Ω N-Channel Power MOSFET 2/7 Version: A14 Electrical Specifications (T C = 25℃ unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static (Note 5) Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 600 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 1A RDS(ON) -- 3.2 4 Ω Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 3 -- 5 V Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 1 µA VDS = 480V, TJ = 125℃ -- -- 10 Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 µA Forward Transconductance VDS = 30V, ID = 1A gfs -- 3 -- S Dynamic (Note 6) Total Gate Charge VDS = 480V, ID = 2A, VGS = 10V Qg -- 9.5 -- nC Gate-Source Charge Qgs -- 2.1 -- Gate-Drain Charge Qgd -- 3.9 -- Input Capacitance VDS = 25V, VGS = 0V, f = 1MHz Ciss -- 362 -- pF Output Capacitance Coss -- 40 -- Reverse Transfer Capacitance Crss -- 7.2 -- Switching (Note 7) Turn-On Delay Time VDD = 300V , VGS = 10V , RG = 25W, ID = 2A td(on) -- 21 -- ns Turn-On Rise Time tr -- 22 -- Turn-Off Delay Time td(off) -- 41 -- Turn-Off Fall Time tf -- 21 -- Source-Drain Diode Ratings and Characteristic (Note 5) Maximum Continuous Drain-Source Diode Forward Current IS -- -- 2 A Maximum Pulse Drain-Source Diode Forward Current ISM -- -- 8 A Diode-Source Forward Voltage VGS = 0V, IS = 2A VSD -- -- 1.5 V Reverse Recovery Time VGS = 0V, IS = 2A dIF/dt = 100A/µs trr -- 238 -- ns Reverse Recovery Charge Qrr -- 0.8 -- nC Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. VDD = 50V, L= 30.5mH, IAS = 2A, RG = 25W, Starting TJ = 25℃ 4. ISD ≤ 2A, di/dt ≤ 200A/µs, VDD ≤ BVDS, Starting TJ = 25℃ 5. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 6. For DESIGN AID ONLY, not subject to production testing. 7. Switching time is essentially independent of operating temperature. |
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