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TSM4NB60CZC0 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM4NB60CZC0 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 11 page  TSM4NB60 600V N-Channel Power MOSFET 1/11 Version: F13 TO-220 ITO-220 PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 4 General Description The TSM4NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. TO-251 (IPAK) TO-252 (DPAK) Features ● Low RDS(ON) 2.2Ω (Typ.) ● Low gate charge typical @ 14.5nC (Typ.) ● Low Crss typical @ 7pF (Typ.) ● 100% Avalanche Tested Ordering Information Part No. Package Packing TSM4NB60CH C5G TO-251 75pcs / Tube TSM4NB60CP ROG TO-252 2.5Kpcs / 13” Reel TSM4NB60CZ C0 TO-220 50pcs / Tube TSM4NB60CI C0G ITO-220 50pcs / Tube Note: “G” denotes for Halogen Free Absolute Maximum Ratings (TA=25oC unless otherwise noted) Parameter Symbol Limit Unit IPAK/DPAK ITO-220 TO-220 Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Continuous Drain Current TC=25ºC ID 4 A TC=100ºC 2.4 A Pulsed Drain Current * IDM 16 A Single Pulse Avalanche Energy (Note 2) EAS 70 mJ Avalanche Current (Repetitive) (Note 1) IAR 4 A Repetitive Avalanche Energy (Note 1) EAR 5 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Total Power Dissipation @ TC=25ºC PTOT 50 25 70 W Operating Junction Temperature TJ 150 ºC Storage Temperature Range TSTG -55 to +150 oC Note: Limited by maximum junction temperature Block Diagram N-Channel MOSFET Pin Definition: 1. Gate 2. Drain 3. Source |
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