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M30621MCM Datasheet(PDF) 10 Page - Mitsubishi Electric Semiconductor |
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M30621MCM Datasheet(HTML) 10 Page - Mitsubishi Electric Semiconductor |
10 / 24 page Electrical characteristics (Vcc = 3V) . Mitsubishi microcomputers M16C / 62M (80-pin version) Group (Low voltage version) SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER 10 µs tSAMP Sampling time 0.3 Min. Typ. Max. tsu RO Resolution Absolute accuracy Setup time Output resistance Reference power supply input current Bits % k Ω mA IVREF 1.0 1.5 8 3 Symbol Parameter Measuring condition Unit 20 10 4 µs ( Note) Standard Note 1: Connect AV CC pin to VCC pin and apply the same electric potential. Note 2: Specify a product of -40 °C to 85°C to use it. Page program time Block erase time Erase all unlocked blocks time Lock bit program time 6 50 50 X n (Note) 6 120 600 600 X n (Note) 120 ms ms ms ms Parameter Standard Min. Typ. Max Unit Note 1: This applies when using one D-A converter, with the D-A register for the unused D-A converter set to “0016”. The A-D converter's ladder resistance is not included. Also, when DA register contents are not “00”, the current I VREF always flows even though Vref may have been set to be unconnected by the A-D control register. Note 2: Specify a product of -40 °C to 85°C to use it. Note : n denotes the number of block erases. RLADDER Ladder resistance µs 9.8 10 VCC 40 Conversion time(8bit), sample & hold function not available tCONV VREF = VCC Standard Min. Typ. Max Resolution Absolute accuracy, sample & hold function not available (8 bit) Bits LSB VREF = VCC ±2 10 Parameter Measuring condition Unit VREF = VCC = 3V, φAD = f(XIN)/2 k Ω Reference voltage V VREF 2.4 VCC Analog input voltage VIA V 0VREF Symbol VREF = VCC = 3V, φAD = f(XIN) =fAD/2 = 5MHz VCC = 3V Table 1.20.3. A-D conversion characteristics (referenced to VCC = AVCC = VREF = 2.4V to 3.6V, VSS = AVSS = 0V at Ta = – 20oC to 85oC / – 40oC to 85oC(Note2), f(XIN) = 10MHz unless otherwise specified) Table 1.20.4. D-A conversion characteristics (referenced to VCC = 2.4V to 3.6V, VSS = AVSS = 0V, VREF = 3V, at Ta = – 20oC to 85oC / – 40oC to 85oC(Note2), f(XIN) = 10MHz unless otherwise specified) Table 1.20.5. Flash memory version electrical characteristics (referenced to VCC = 2.7V to 3.6V, at Ta =0oC to 60oC unless otherwise specified) Table 1.20.6. Flash memory version program voltage and read operation voltage characteristics (Ta =0oC to 60oC) Flash program voltage Flash read operation voltage VCC=2.7V to 3.6V VCC=2.4V to 3.6V VCC=2.7V to 3.4V VCC=2.2V to 2.4V |
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