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TSM7N60 Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

Part # TSM7N60
Description  600V N-Channel Power MOSFET
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSM7N60 Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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TSM7N60
600V N-Channel Power MOSFET
2/9
Version: A11
Thermal Performance
Parameter
Symbol
Limit
Unit
Thermal Resistance - Junction to Case
TO-220
JC
1.0
oC/W
ITO-220
4.2
Thermal Resistance - Junction to Ambient
JA
62.5
oC/W
Note: Surface mounted on FR4 board t ≤ 10sec
Electrical Specifications (Ta = 25
oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
600
--
--
V
Drain-Source On-State Resistance
VGS = 10V, ID = 3.5A
RDS(ON)
--
1.0
1.2
Gate Threshold Voltage
VDS = VGS, ID = 250uA
VGS(TH)
2.0
--
4.0
V
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
IDSS
--
--
1
uA
VDS = 600V, VGS = 0V,
TC=125ºC
--
--
50
Gate Body Leakage
VGS = ±30V, VDS = 0V
IGSS
--
--
±10
uA
Forward Transfer Conductance
VDS = 10V, ID = 3.5A
gfs
--
7.3
--
S
Diode Forward Voltage
IS = 7A, VGS = 0V
VSD
--
--
1.4
V
Dynamic
Total Gate Charge
VDS = 300V, ID = 7A,
VGS = 10V
Qg
--
28
--
nC
Gate-Source Charge
Qgs
--
5.5
--
Gate-Drain Charge
Qgd
--
11
--
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Ciss
--
950
--
pF
Output Capacitance
Coss
--
85
--
Reverse Transfer Capacitance
Crss
--
12
--
Switching
Turn-On Delay Time
VGS = 10V, ID = 7A,
VDD = 300V, RG = 25
td(on)
--
16
--
nS
Turn-On Rise Time
tr
--
60
--
Turn-Off Delay Time
td(off)
--
80
--
Turn-Off Fall Time
tf
--
65
--
Reverse Recovery Time
VGS = 0V, IS = 7A,
dIF/dt = 100A/us
tfr
--
365
--
nS
Reverse Recovery Charge
Qfr
--
4.23
--
uC
Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
Note 2: VDD = 50V, IAS=7A, L=9.8mH, RG=27
Note 3: Pulse test: pulse width ≤300uS, duty cycle ≤2%
Note 4: Essentially Independent of Operating Temperature


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