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TSM2302 Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM2302 Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
2 / 6 page TSM2302 20V N-Channel MOSFET 2/6 Version: C15 Electrical Specifications Parameter Conditions Symbol Min Typ Max Unit Static (Note 3) Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 20 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 0.65 0.95 1.2 V Gate Body Leakage VGS = ±8V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 16V, VGS = 0V IDSS -- -- 1.0 μA On-State Drain Current VDS = 5V, VGS = 4.5V ID(ON) 6 -- -- A Drain-Source On-State Resistance VGS = 4.5V, ID = 2.8A RDS(ON) -- 40 65 m Ω VGS = 2.5V, ID = 2.0A -- 50 95 Forward Transconductance VDS = 5V, ID = 2.8A gfs -- 10 -- S Diode Forward Voltage IS = 1.6A, VGS = 0V VSD -- 0.76 1.2 V Dynamic (Note 4) Total Gate Charge VDS = 10V, ID = 2.8A, VGS = 4.5V Qg -- 5.4 10 nC Gate-Source Charge Qgs -- 0.65 -- Gate-Drain Charge Qgd -- 1.4 -- Input Capacitance VDS = 10V, VGS = 0V, f = 1.0MHz Ciss -- 340 -- pF Output Capacitance Coss -- 115 -- Reverse Transfer Capacitance Crss -- 33 -- Switching (Note 5) Turn-On Delay Time VDD = 6V, RL = 10Ω, ID = 1A, VGEN = 4.5V, RG = 6Ω td(on) -- 12 25 ns Turn-On Rise Time tr -- 36 60 Turn-Off Delay Time td(off) -- 34 60 Turn-Off Fall Time tf -- 10 25 Notes: 1. Pulse width limited by the maximum junction temperature 2. Surface Mounted on FR4 Board t ≤ 5 sec. 3. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 4. For DESIGN AID ONLY, not subject to production testing. 5. Switching time is essentially independent of operating temperature. |
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