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NTD106B Datasheet(PDF) 1 Page - Naina Semiconductor ltd. |
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NTD106B Datasheet(HTML) 1 Page - Naina Semiconductor ltd. |
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1 / 3 page  Naina Semiconductor Ltd. NTD106B 1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 sales@nainasemi.com • www.nainasemi.com Thyristor-Diode Module, 106 Amps Features • Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Low thermal resistance Voltage Ratings (TA = 25oC, unless otherwise noted) Type number Voltage Code VRRM, Maximum repetitive peak reverse voltage (V) VRSM, Maximum non- repetitive peak reverse voltage (V) VDRM, Maximum repetitive peak off- state voltage (V) IRRM, Maximum reverse leakage current @ TJMAX (mA) 60 600 700 600 80 800 900 800 100 1000 1100 1000 NTD106B 120 1200 1300 1200 10 140 1400 1500 1400 160 1600 1700 1600 180 1800 1900 1800 Electrical Characteristics (TA = 25 0C unless otherwise noted) Parameter Symbol Values Units Maximum average forward current @ TJ = 850C IT(AV) 106 A Maximum average RMS forward current IT(RMS) 166 A Maximum non-repetitive surge current ITSM 2250 A Maximum I2t for fusing I2t 25300 A2s Forward voltage drop VTM 1.3 V Critical rate of rise of on-state current di/dt 150 A/µs Critical rate of rise of off-state voltage dv/dt 1000 V/µs Gate current required to trigger IGT 150 mA Gate voltage required to trigger VGT 3 V Maximum holding current IH 150 mA Maximum latching current IL 300 mA Isolation voltage VISO 3000 V Thermal & Mechanical Specifications (TA = 25 0C unless otherwise noted) Parameter Symbol Values Units Operating junction temperature range TJ -40 to +125 0C Storage temperature Tstg -40 to +125 0C Thermal resistance, junction to case Rth(JC) 0.28 0C/W Mounting torque to heatsink F 4 ± 15% Nm to terminals 3 ± 15% Weight W 100 g |
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