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NTT72A Datasheet(PDF) 1 Page - Naina Semiconductor ltd.

Part # NTT72A
Description  Thyristor-Thyristor Module, 70 Amps
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Manufacturer  NAINA [Naina Semiconductor ltd.]
Direct Link  http://www.nainasemi.com
Logo NAINA - Naina Semiconductor ltd.

NTT72A Datasheet(HTML) 1 Page - Naina Semiconductor ltd.

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Naina Semiconductor Ltd.
NTT72A
1
D-95, Sector 63, Noida – 201301, India
Tel: 0120-4205450
Fax: 0120-4273653
sales@nainasemi.com
www.nainasemi.com
Thyristor-Thyristor Module, 70 Amps
Features
Improved glass passivation for high reliability
Exceptional stability at high temperatures
High di/dt and dv/dt capabilities
Low thermal resistance
Voltage Ratings (TA = 25oC, unless otherwise noted)
Type
number
Voltage
Code
VRRM, Maximum
repetitive peak
reverse voltage
(V)
VRSM, Maximum non-
repetitive peak reverse
voltage
(V)
VDRM, Maximum
repetitive peak off-
state voltage
(V)
IRRM, Maximum
reverse leakage
current @ TJMAX
(mA)
60
600
700
600
80
800
900
800
100
1000
1100
1000
NTT72A
120
1200
1300
1200
8
140
1400
1500
1400
160
1600
1700
1600
180
1800
1900
1800
Electrical Characteristics (TA = 25
0C unless otherwise noted)
Parameter
Symbol
Values
Units
Maximum average forward current @ TJ = 850C
IT(AV)
70
A
Maximum average RMS forward current
IT(RMS)
110
A
Maximum non-repetitive surge current
ITSM
1600
A
Maximum I2t for fusing
I2t
12800
A2s
Forward voltage drop
VTM
1.25
V
Critical rate of rise of on-state current
di/dt
150
A/µs
Critical rate of rise of off-state voltage
dv/dt
1000
V/µs
Gate current required to trigger
IGT
150
mA
Gate voltage required to trigger
VGT
3
V
Maximum holding current
IH
150
mA
Maximum latching current
IL
300
mA
Isolation voltage
VISO
3000
V
Thermal & Mechanical Specifications (TA = 25
0C unless otherwise noted)
Parameter
Symbol
Values
Units
Operating junction temperature range
TJ
-40 to +125
0C
Storage temperature
Tstg
-40 to +125
0C
Thermal resistance, junction to case
Rth(JC)
0.35
0C/W
Mounting torque
to heatsink
F
4 ± 15%
Nm
to terminals
3 ± 15%
Weight
W
100
g


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