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NTT72A Datasheet(PDF) 1 Page - Naina Semiconductor ltd. |
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NTT72A Datasheet(HTML) 1 Page - Naina Semiconductor ltd. |
1 / 2 page Naina Semiconductor Ltd. NTT72A 1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653 sales@nainasemi.com • www.nainasemi.com Thyristor-Thyristor Module, 70 Amps Features • Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Low thermal resistance Voltage Ratings (TA = 25oC, unless otherwise noted) Type number Voltage Code VRRM, Maximum repetitive peak reverse voltage (V) VRSM, Maximum non- repetitive peak reverse voltage (V) VDRM, Maximum repetitive peak off- state voltage (V) IRRM, Maximum reverse leakage current @ TJMAX (mA) 60 600 700 600 80 800 900 800 100 1000 1100 1000 NTT72A 120 1200 1300 1200 8 140 1400 1500 1400 160 1600 1700 1600 180 1800 1900 1800 Electrical Characteristics (TA = 25 0C unless otherwise noted) Parameter Symbol Values Units Maximum average forward current @ TJ = 850C IT(AV) 70 A Maximum average RMS forward current IT(RMS) 110 A Maximum non-repetitive surge current ITSM 1600 A Maximum I2t for fusing I2t 12800 A2s Forward voltage drop VTM 1.25 V Critical rate of rise of on-state current di/dt 150 A/µs Critical rate of rise of off-state voltage dv/dt 1000 V/µs Gate current required to trigger IGT 150 mA Gate voltage required to trigger VGT 3 V Maximum holding current IH 150 mA Maximum latching current IL 300 mA Isolation voltage VISO 3000 V Thermal & Mechanical Specifications (TA = 25 0C unless otherwise noted) Parameter Symbol Values Units Operating junction temperature range TJ -40 to +125 0C Storage temperature Tstg -40 to +125 0C Thermal resistance, junction to case Rth(JC) 0.35 0C/W Mounting torque to heatsink F 4 ± 15% Nm to terminals 3 ± 15% Weight W 100 g |
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