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M2S56D30ATP-75A Datasheet(PDF) 10 Page - Mitsubishi Electric Semiconductor

Part # M2S56D30ATP-75A
Description  256M Double Data Rate Synchronous DRAM
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

M2S56D30ATP-75A Datasheet(HTML) 10 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI ELECTRIC
Jul. '01 Preliminary
MITSUBISHI LSIs
DDR SDRAM (Rev.1.0)
M2S56D20/ 30/ 40AKT
256 M Double Data Rate Synchronous DRAM
FUNCTION TRUTH TABLE (continued)
ABBREVIATIONS:
H=High Level, L=Low Level, X=Don't Care
BA=Bank Address, RA=Row Address, CA=Column Address, NOP=No Operation
NOTES:
1. All entries assume that CKE was High during the preceding clock cycle and the current clock cycle.
2. ILLEGAL to bank in specified state; function may be legal in the bank indicated by BA, depending on the state of
that bank.
3. Must satisfy bus contention, bus turn around, write recovery requirements.
4. NOP to bank precharging or in idle state. May precharge bank indicated by BA.
5. ILLEGAL if any bank is not idle.
6. Refer to Read with Auto -Precharge in page 24.
7. Refer to Write with Auto-Precharge in page 26.
ILLEGAL = Device operation and/or data-integrity are not guaranteed.
Current State
/CS /RAS /CAS /WE Address
Command
Action
Notes
REFRESHING
H
X
X
X
X
DESEL
NOP (Idle after tRC)
L
H
H
H
X
NOP
NOP (Idle after tRC)
L
H
H
L
BA
TERM
ILLEGAL
L
H
L
X
BA, CA, A10
READ / WRITE
ILLEGAL
L
L
H
H
BA, RA
ACT
ILLEGAL
L
L
H
L
BA, A10
PRE / PREA
ILLEGAL
L
L
L
H
X
REFA
ILLEGAL
L
L
L
L
Op-Code, Mode-
Add
MRS
ILLEGAL
H
X
X
X
X
DESEL
NOP (Row Active after tRSC)
L
H
H
H
X
NOP
NOP (Row Active after tRSC)
L
H
H
L
BA
TERM
ILLEGAL
L
H
L
X
BA, CA, A10
READ / WRITE
ILLEGAL
L
L
H
H
BA, RA
ACT
ILLEGAL
L
L
H
L
BA, A10
PRE / PREA
ILLEGAL
L
L
L
H
X
REFA
ILLEGAL
L
L
L
L
Op-Code, Mode-
Add
MRS
ILLEGAL
MODE
REGISTER
SETTING


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