13.08.2012

APG2C1-1020

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APG2C1-1020

IR High Power single chip LED

APG2C1-1020 is a GaAlAs based, high power 1020 nm single chip LED in standard emitter package for

general application.

Specifications

•

Structure: GaAlAs

•

Peak Wavelength: 1020 nm

•

Optical Output Power: typ. 40 mW

•

Housing: standard emitter package

Parameter

Symbol

Value

Unit

Power Dissipation, DC

1000

mW

Forward Current, DC

500

mA

Pulsed Current (1% duty cycle, 1kHz)

1000

mA

Reverse Voltage

-5

V

Operating Temperature

-30 … +70

°C

Storage Temperature

-30 … +85

°C

Soldering Temperature (max. 1,5 s)

330

°C

Parameter

Symbol

Condition

Min.

Typ.

Max.

Unit

Forward Current

-

350

-

mA

Viewing Angle

φ

±

75

deg.

CW Output Power

40

mW

Peak Wavelength

λ

P

1020

nm

Forward Voltage

-

1.3

-

V

Half Width (FWHM)

Δλ

-

35

nm

Wavelength measurements tolerance is +/- 2%

Output power measurement tolerance is +/- 10%

Voltage measurement tolerance is +/- 2%

Device Materials

Item

Material

Foundation

Plastic

Lens

Acryl

Electrodes

AgCu

Heat Sink

AgCu