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M30621MCM-F40GP Datasheet(PDF) 11 Page - Mitsubishi Electric Semiconductor |
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M30621MCM-F40GP Datasheet(HTML) 11 Page - Mitsubishi Electric Semiconductor |
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11 / 24 page  Electrical characteristics (Vcc = 3V) . Mitsubishi microcomputers M16C / 62M (80-pin version) Group (Low voltage version) SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER 11 VOH VOH VOL VOL V V XOUT 2.5 2.5 V 0.5 V XOUT 0.5 0.5 2.5 IOH=–1mA IOH=–0.1mA IOH=–50 µA IOL=1mA IOL=0.1mA IOL=50 µA P00 to P07, P20 to P27, P30 to P37, P00 to P07, P20 to P27, P30 to P37, P40 to P43, P50 to P57, P60 to P67, P40 to P43, P50 to P57, P60 to P67, P76, P77, P80 to P84, P86, P87, HIGHPOWER LOWPOWER P90, P92 to P97, P100 to P107 HIGHPOWER LOWPOWER P70, P71, P76, P77, P80 to P84, P86, P87, P90, P92 to P97, P100 to P107 HIGHPOWER LOWPOWER XCOUT With no load applied With no load applied 3.0 1.6 V SymbolParameter Standard Typ. Max. Unit Min. Measuring condition HIGH output voltage HIGH output voltage HIGH output voltage LOW output voltage LOW output voltage IIH I IL VRAM VT+-VT- VT+-VT- 0.20.8V 0.21.8V P00 to P07, P20 to P27, P30 to P37, 4.0 µA µA RESET XIN, RESET, CNVss (BYTE) TA0IN, TA3IN, TA4IN, TB0IN, TB2IN to TB5IN, INT0 to INT2, VI=3V VI=0V–4.0 P00 to P07, P20 to P27, P30 to P37, XIN, RESET, CNVss (BYTE) RfXIN RfXCIN XIN XCIN 10.0 3.0M Ω M Ω P90, P92 to P97, P100 to P107, P70, P71, P76, P77, P80 to P87, P40 to P43, P50 to P57, P60 to P67, P90, P92 to P97, P100 to P107, P70, P71, P76, P77, P80 to P87, P40 to P43, P50 to P57, P60 to P67, CLK4, TA3OUT, TA4OUT, NMI, KI0 to KI3, Icc ADTRG,CTS0,CTS1 CLK0,CLK1,CLK3, 2.0 V When clock is stopped Hysteresis Hysteresis HIGH input current LOW input current Feedback resistance Feedback resistance RAM retention voltage Power supply current The output pins are open and other pins are VSS SIN4, RXD0 to RXD2 Note 1: Specify a product of -40 °C to 85°C to use it. Note 2: With one timer operated using fC32. Square wave f(XCIN)=32kHz 45.0 µA Square wave, no division f(XIN)=10MHz mA 9.5 21.25 Mask ROM version Square wave, no division f(XIN)=10MHz mA 12.0 21.25 Flash memory 3V version Mask ROM version Flash memory 3V version Square wave, division by 2 f(XIN)=10MHz mA Flash memory 3V version Program 1.0 µA 20.0 0.9 µA 2.8 µA f(XCIN)=32kHz f(XCIN)=32kHz Ta=85 °C when clock is stopped Ta=25 °C when clock is stopped When a WAIT instruction is executed. Oscillation capacity High (Note2) When a WAIT instruction is executed. Oscillation capacity Low (Note2) Square wave, division by 2 f(XIN)=10MHz 17.0 mA Flash memory 3V version Erase 14.0 P00 to P07, P20 to P27, P30 to P37, P40 to P43, P50 to P57, P60 to P67, P76, P77, P80 to P84, P86,P87, P90, P92 to P97, P100 to P107 K Ω 20 75 300 VI=0V RPULLUP Pull-up resistance Mask ROM version Flash memory 3V version V XCOUT With no load applied With no load applied HIGHPOWER LOWPOWER LOW output voltage 0 0 VCC = 3V Table 1.20.7. Electrical characteristics (referenced to VCC = 2.7V to 3.6V, VSS = 0V at Ta = – 20oC to 85oC / – 40oC to 85oC(Note 1), f(XIN) = 10MHz without wait unless otherwise specified) |
Similar Part No. - M30621MCM-F40GP |
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Similar Description - M30621MCM-F40GP |
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