MMBT5551LT1 datasheet(2/4 Pages) LRC

Part #	MMBT5551LT1

Description	High Voltage Transistors(NPN Silicon)

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Manufacturer	LRC [Leshan Radio Company]

Direct Link	http://www.lrc.cn/

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LESHAN RADIO COMPANY, LTD.

M20–2/4

MMBT5550LT1 MMBT5551LT1

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS

DC Current Gain

h

FE

––

(I C = 1.0 mAdc, V CE = 5.0 Vdc)

MMBT5550

60

—

MMBT5551

80

—

(I C = 10 mAdc, V CE = 5.0 Vdc)

MMBT5550

60

250

MMBT5551

80

250

(I C = 50 mAdc, V CE = 5.0Vdc)

MMBT5550

20

—

MMBT5551

30

—

Collector–Emitter Saturation Voltage

V

CE(sat)

Vdc

(I C = 10 mAdc, I B = 1.0 mAdc)

Both Types

—

0.15

(I C = 50 mAdc, I B = 5.0 mAdc )

MMBT5550

—

0.25

MMBT5551

—

0.20

Base–Emitter Saturation Voltage

V

BE(sat)

Vdc

(I C = 10 mAdc, I B = 1.0 mAdc)

Both Types

—

1.0

(I C = 50 mAdc, I B = 5.0 mAdc)

MMBT5550

—

1.2

MMBT5551

—

1.0

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