MMBT6520LT1 datasheet(1/5 Pages) LRC

Part #	MMBT6520LT1

Description	High Voltage Transistor(PNP Silicon)

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Manufacturer	LRC [Leshan Radio Company]

Direct Link	http://www.lrc.cn/

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LESHAN RADIO COMPANY, LTD.

M24–1/5

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

V CEO

–350

Vdc

Collector–Base Voltage

V CBO

–350

Vdc

Emitter–Base Voltage

V EBO

–5.0

Vdc

Base Current

I B

–250

mA

Collector Current — Continuous

I C

–500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

PD

225

mW

TA = 25°C

Derate above 25°C

1.8

mW/°C

Thermal Resistance, Junction to Ambient

RθJA

556

°C/W

Total Device Dissipation

PD

300

mW

Alumina Substrate, (2) TA = 25°C

Derate above 25°C

2.4

mW/°C

Thermal Resistance, Junction to Ambient

RθJA

417

°C/W

Junction and Storage Temperature

TJ , Tstg

–55 to +150

°C

DEVICE MARKING

MMBT6520LT1 = 2Z

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (I C = –1.0 mA )

V (BR)CEO

–350

—

Vdc

Collector–Base Breakdown Voltage(I E = –100

µA )

V (BR)CBO

–350

—

Vdc

Emitter–Base Breakdown Voltage(I E = –10

µA)

V (BR)EBO

–5.0

—

Vdc

Collector Cutoff Current( V CB = –250V )

I CBO

—

–50

nA

Emitter Cutoff Current( V EB = –4.0V )

I

EBO

—

–50

nA

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

1

3

2

MMBT6520LT1

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

High Voltage Transistor

PNP Silicon

2

EMITTER

3

COLLECTOR

1

BASE

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