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STP35N10 Datasheet(PDF) 4 Page - SamHop Microelectronics Corp.

Part # STP35N10
Description  Super high dense cell design for extremely low RDS(ON).
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Manufacturer  SAMHOP [SamHop Microelectronics Corp.]
Direct Link  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STP35N10 Datasheet(HTML) 4 Page - SamHop Microelectronics Corp.

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www.samhop.com.tw
Apr,22,2014
4
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
Rg, Gate Resistance(
Ω)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
110
100
1
10
100
300
VDS=50V,ID=1A
VGS=10V
TD(on)
Tr
TD(off )
Tf
120
100
80
60
40
20
0
10
0
125 C
75 C
25 C
ID=17.5A
10
1
20
Ciss
Coss
Crss
2100
1750
1400
1050
700
350
0
10
15
20
25
30
0
5
10
8
6
4
2
0
VDS=50V
ID=17.5A
8
6
4
2
0
1.25
1.00
0.75
0.50
0.25
25 C
75 C
125 C
STP35N10
Ver 1.1
0
3
69
12
15
18
21
24
VDS, Drain-Source Voltage(V)
0.1
1
10
100
100
10
1
0.3
VGS=10V
Single Pulse
TC=25 C
1m
s
100
us
10u
s


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