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BSS127SSN-7 Datasheet(PDF) 2 Page - Diodes Incorporated |
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BSS127SSN-7 Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 6 page  BSS127 Document number: DS35476 Rev. 6 - 2 2 of 6 www.diodes.com January 2013 © Diodes Incorporated BSS127 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 5) VGS = 10V Steady State TA = +25°C TA = +70°C ID 50 40 mA Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 70 55 mA Continuous Drain Current (Note 5) VGS = 5V Steady State TA = +25°C TA = +70°C ID 45 35 mA Continuous Drain Current (Note 6) VGS = 5V Steady State TA = +25°C TA = +70°C ID 65 50 mA Pulsed Drain Current @ TSP = +25°C (Notes 7) IDM 0.16 A Thermal Characteristics Characteristic Symbol Value Units Power Dissipation, @TA = +25°C (Note 5) PD 0.61 W Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 5) RθJA 204 °C/W Power Dissipation, @TA = +25°C (Note 6) PD 1.25 W Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 6) RθJA 100 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 600 — — V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — 0.1 µA VDS = 600V, VGS = 0V Gate-Body Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) 3 — 4.5 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) — 80 160 Ω VGS = 10V, ID = 16mA — 95 190 VGS = 5.0V, ID = 16mA Forward Transfer Admittance |Yfs| — 76 — mS VDS = 10V, ID = 16mA Diode Forward Voltage VSD — — 1.5 V VGS = 0V, IS = 16mA DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss — 21.8 — pF VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 2.2 — Reverse Transfer Capacitance Crss — 0.3 — Total Gate Charge Qg — 1.08 — nC VGS = 10V, VDD = 300V, ID = 0.01A Gate-Source Charge Qgs — 0.08 — Gate-Drain Charge Qgd — 0.50 — Turn-On Delay Time tD(on) — 5.0 — ns VDD = 300V, VGS = 10V, RGEN = 6Ω, ID = 10mA Turn-On Rise Time tr — 7.2 — ns Turn-Off Delay Time tD(off) — 28.7 — ns Turn-Off Fall Time tf — 168 — ns Reverse Recovery Time Trr — 131 — ns VR =300 V, IF =0.016 A, di/dt = 100A/µs Reverse Recovery Charge Qrr — 32 — nC Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided. 7. Repetitive rating, pulse width limited by junction temperature, 10µs pulse, duty cycle = 1%. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. |
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