DMC1028UFDB

Document number: DS37634 Rev. 4 - 2

2 of 10

www.diodes.com

May 2015

© Diodes Incorporated

DMC1028UFDB

Characteristic

Symbol

Q1

N-CHANNEL

Q2

P-CHANNEL

Units

Drain-Source Voltage

12

-20

V

Gate-Source Voltage

±8

±8

V

Steady

State

6.0

4.8

-3.4

-2.7

A

t < 5s

7.1

5.7

-4.0

-3.2

A

Maximum Continuous Body Diode Forward Current (Note 5)

1.4

-1.4

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

40

-20

A

Avalanche Current L = 0.1mH

12

-12

A

Avalanche Energy L = 0.1mH

8.4

7.5

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

Steady State

1.36

W

t < 5s

1.89

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

92

°C/W

t < 5s

66

Thermal Resistance, Junction to Case (Note 5)

19

Operating and Storage Temperature Range

-55 to +150

°C

Note:

5.

Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

12

-

-

V

-

-

1.0

μA

Gate-Source Leakage

-

-

±10

μA

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

0.4

-

1

V

Static Drain-Source On-Resistance

-

17

25

m

Ω

-

19

30

-

21

32

-

30

40

Diode Forward Voltage

-

0.7

1.2

V

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

-

787

-

pF

f = 1.0MHz

Output Capacitance

-

203

-

pF

Reverse Transfer Capacitance

-

177

-

pF

Gate Resistance

-

4.8

-

Ω

-

7.9

-

nC

-

10.5

-

nC

-

18.5

-

nC

Gate-Source Charge

-

1.2

-

nC

Gate-Drain Charge

-

2.9

-

nC

Turn-On Delay Time

-

4.6

-

ns

Turn-On Rise Time

-

9.4

-

ns

Turn-Off Delay Time

-

15.7

-

ns

Turn-Off Fall Time

-

3.7

-

ns

Body Diode Reverse Recovery Time

-

12.0

-

ns

Body Diode Reverse Recovery Charge

-

1.8

-

nC