MMVL409T1 datasheet(1/2 Pages) LRC

Part #	MMVL409T1

Description	Silicon Tuning Diode

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Manufacturer	LRC [Leshan Radio Company]

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LESHAN RADIO COMPANY, LTD.

MMVL409T1–1/2

PLASTIC, CASE 477

SOD– 323

1

2

ANODE

1

CATHODE

MAXIMUM RATINGS

Symbol

Rating

Value

Unit

VR

Continuous Reverse Voltage

20

Vdc

IF

Peak Forward Current

200

mAdc

THERMALCHARACTERISTICS

Symbol

Characteristic

Max

Unit

PD

Total Device Dissipation FR–5 Board,*

200

mW

TA = 25°C

Derate above 25°C

1.57

mW/°C

RθJA

Thermal Resistance Junction to Ambient

635

°C/W

TJ, Tstg

Junction and Storage Temperature

150

°C

*FR–4 Minimum Pad

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse BreakdownVoltage

V(BR)R

20

—

Vdc

(IR = 10

µAdc)

Reverse Voltage Leakage Current

I R

—

0.1

µAdc

(VR = 15 Vdc)

Diode Capacitance Temperature Coefficient

TCC

—

300

—

ppm/°C

(VR = 3.0 Vdc, f = 1.0 MHz)

Ct, Diode Capacitance

Q, Figure of Merit

CR, Capacitance Ratio

VR = 3.0 Vdc, f = 1.0 MHz

VR = 3.0 Vdc

C3/C8

pF

f = 50 MHz

f = 1.0 MHz(1)

Device

Min

Nom

Max

Min

Max

MMVL409T1

26

29

32

200

1.5

1.9

1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 Vdc.

These devices are designed for general frequency control and tuning

applications. They provide solid–state reliability in replacement of mechanical

tuning methods.

• High Q with Guaranteed Minimum Values at VHF Frequencies

• Controlled and Uniform Tuning Ratio

• Surface Mount Package

• Device Marking: X5

MMVL409T1

VOLTAGEVARIABLE

CAPACITANCEDIODE

Silicon Tuning Diode

ORDERING INFORMATION

Device

Package

Shipping

MMVL409T1

SOD–323

3000 / Tape & Reel

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