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STUD320S Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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STUD320S Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
1 / 8 page S mHop Microelectronics C orp. a STU/D320S Symbol VDS VGS IDM EAS W A PD °C 20 -55 to 150 ID Units Parameter 30 30 V V ±20 Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS 15 mJ PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Max 30V 30A 29 @ VGS=4.5V 20 @ VGS=10V FEATURES N-Channel Logic Level Enhancement Mode Field Effect Transistor ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Limit Drain Current-Continuous a -Pulsed b A Avalanche Energy d Maximum Power Dissipation a Operating Junction and Storage Temperature Range TJ, TSTG Ver 1.0 www.samhop.com.tw Aug,11,2008 1 TO-252 and TO-251 Package. Super high dense cell design for low RDS(ON). Rugged and reliable. STU SERIES TO-252AA(D-PAK) G S D STD SERIES TO-251(l-PAK) G S D TC=25°C TC=25°C ESD Protected. G D S 120 TC=70°C 24 A TC=70°C 32 W 50 °C/W Thermal Resistance, Junction-to-Ambient R JA 4 °C/W Thermal Resistance, Junction-to-Case R JC a a e |
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