2N6294

2N6295

MAXIMUM RATINGS: (TC=25°C)

SYMBOL

2N6296

2N6297

UNITS

Collector-Base Voltage

VCBO

60

80

V

Collector-Emitter Voltage

VCEO

60

80

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

4.0

A

Peak Collector Current

ICM

8.0

A

Continuous Base Current

IB

80

mA

Power Dissipation

PD

50

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +200

°C

Thermal Resistance

JC

3.5

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICEV

VCE=Rated VCEO, VEB=1.5V

0.5

mA

ICEV

VCE=Rated VCEO, VEB=1.5V, TC=150°C

5.0

mA

ICEO

VCE=½Rated VCEO

0.5

mA

IEBO

VEB=5.0V

2.0

mA

BVCEO

IC=50mA, (2N6294, 2N6296)

60

V

BVCEO

IC=50mA, (2N6295, 2N6297)

80

V

VCE(SAT)

IC=2.0A, IB=8.0mA

2.0

V

VCE(SAT)

IC=4.0A, IB=40mA

3.0

V

VBE(SAT)

IC=4.0A, IB=40mA

4.0

V

VBE(ON)

VCE=3.0V, IC=2.0A

2.8

V

hFE

VCE=3.0V, IC=2.0A

750

18K

hFE

VCE=3.0V, IC=4.0A

100

hfe

VCE=3.0V, IC=1.5A, f=1.0kHz

300

fT

VCE=3.0V, IC=1.5A, f=1.0MHz

4.0

MHz

Cob

VCB=10V, IE=0, f=100kHz (NPN types)

120

pF

Cob

VCB=10V, IE=0, f=100kHz (PNP types)

200

pF

2N6294 2N6295

NPN

2N6296 2N6297

PNP

COMPLEMENTARY SILICON

DARLINGTON POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N6294, 2N6296

series devices are complementary silicon Darlington

power transistors, manufactured by the epitaxial base

process, designed for high gain amplifier and medium

speed switching applications.

MARKING: FULL PART NUMBER

TO-66 CASE

R2 (2-September 2014)

www.centr a lsemi.com