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LED690-66-60 Datasheet(PDF) 1 Page - Roithner LaserTechnik GmbH |
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LED690-66-60 Datasheet(HTML) 1 Page - Roithner LaserTechnik GmbH |
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1 / 1 page 07.04.2011 LED690-66-60 1 of 1 LED690-66-60 TECHNICAL DATA High Power LED Array, 60 chips GaAs LED690-66-60 is a wide viewing and extremely high output power illuminator assembled with a total of 60 high efficiency AlGaAs diode chips, mounted on a metal stem TO-66 with AIN ceramics and covered with double coated clear silicone and epoxy resin. These devices are designed for high current operation with proper heat sinking to improver thermal conductive efficiency. Specifications • Structure: GaAs, 60 LED chips • Peak Wavelength: typ. 690 nm • Optical Output Power: typ. 300 mW • Package: TO-66 stem with AIN, clear silicone and epoxy resin Absolute Maximum Ratings (TC=25°C) Item Symbol Value Unit Power Dissipation PD 4.0 W Forward Current IF 400 mA Pulsed Forward current * 2 IFP 2000 mA Reverse Voltage VR 50 V Operating Temperature Topr -30 … +80 °C Storage Temperature Tstg -30 … +110 °C Soldering Temperature * Tsol 240 °C * must be completed within 3 seconds * 2 max puls width 1µs and max duty cycle 1% (Unit: mm) Electro-Optical Characteristics Item Symbol Condition Min. Typ. Max. Unit Total Radiated Power PO IF = 600 mA - 300 - mW Forward Voltage VF IF = 600 mA - 9.8 - V Reverse Voltage VR IR = 10 µA 50 - - V Peak Wavelength λ P IF = 600 mA 670 690 710 nm Half Width Δλ IF = 600 mA - 20 - nm Viewing Half Angle Θ 1/2 IF = 600 mA - ±60 - deg. Heat Sink is required, thermal resistance <8K/W Notes • This high power LED must be cooled! • Do not view directly into the emitting area of the LED during operation! • The above specifications are for reference purpose only and subjected to change without prior notice. |
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