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DMN10H170SFDE-13 Datasheet(PDF) 4 Page - Diodes Incorporated |
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DMN10H170SFDE-13 Datasheet(HTML) 4 Page - Diodes Incorporated |
4 / 6 page DMN10H170SFDE Datasheet number: DS35901 Rev. 4 - 2 4 of 6 www.diodes.com February 2015 © Diodes Incorporated DMN10H170SFDE 0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature J I = 250µA D 0 1 2 3 4 5 6 7 8 9 10 0 0.2 0.4 0.6 0.8 1.0 1.2 V , SOURCE-DRAIN VOLTAGE (V) SD Fig. 8 Diode Forward Voltage vs. Current T = 25°C A 0 10 20 30 40 V , DRAIN-SOURCE VOLTAGE (V) DS Fig. 9 Typical Junction Capacitance C iss Coss C rss f = 1MHz 0 2 4 6 8 10 Q (nC) g, TOTAL GATE CHARGE Fig. 10 Gate Charge 0 2 4 6 8 10 V = 80V I = A DS D 12.8 V , DRAIN-SOURCE VOLTAGE (V) DS Figure 11 SOA, Safe Operation Area 0.001 0.01 0.1 1 10 100 0.1 1 10 100 1000 DC P = 10s W P = 1s W P = 100ms W P = 100µs W P = 1ms W P = 10ms W RDS(on) Limited T = 150°C J (m ax ) T = 25°C A V = 10V GS Single Pulse DUT on 1 * MRP Board |
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