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DMN10H170SFDE-13 Datasheet(PDF) 4 Page - Diodes Incorporated

Part # DMN10H170SFDE-13
Description  100V N-CHANNEL ENHANCEMENT MODE MOSFET
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN10H170SFDE-13 Datasheet(HTML) 4 Page - Diodes Incorporated

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DMN10H170SFDE
Datasheet number: DS35901 Rev. 4 - 2
4 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DMN10H170SFDE
0
0.5
1.0
1.5
2.0
2.5
3.0
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
J
I = 250µA
D
0
1
2
3
4
5
6
7
8
9
10
0
0.2
0.4
0.6
0.8
1.0
1.2
V
, SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
T = 25°C
A
0
10
20
30
40
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 9 Typical Junction Capacitance
C
iss
Coss
C
rss
f = 1MHz
0
2
4
6
8
10
Q
(nC)
g, TOTAL GATE CHARGE
Fig. 10 Gate Charge
0
2
4
6
8
10
V
= 80V
I =
A
DS
D
12.8
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 11 SOA, Safe Operation Area
0.001
0.01
0.1
1
10
100
0.1
1
10
100
1000
DC
P
= 10s
W
P
= 1s
W
P
= 100ms
W
P
= 100µs
W
P
= 1ms
W
P
= 10ms
W
RDS(on)
Limited
T
= 150°C
J (m ax )
T = 25°C
A
V
= 10V
GS
Single Pulse
DUT on 1 * MRP Board


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