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DMN10H170SFG-7 Datasheet(PDF) 2 Page - Diodes Incorporated

Part # DMN10H170SFG-7
Description  N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI짰
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN10H170SFG-7 Datasheet(HTML) 2 Page - Diodes Incorporated

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POWERDI is a registered trademark of Diodes Incorporated
DMN10H170SFG
Document number: DS36147 Rev. 4 - 2
2 of 6
www.diodes.com
August 2013
© Diodes Incorporated
DMN10H170SFG
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
TA = +25°C
TA = +70°C
TC = +25°C
ID
2.9
2.4
8.5
A
t<10s
TA = +25°C
TA = +70°C
ID
3.7
3.0
A
Maximum Continuous Body Diode Forward Current (Note 6)
IS
3.0
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
IDM
16
A
Avalanche Current (Note 7)
IAR
5.3
A
Avalanche Energy (Note 7)
EAR
20
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
TA = +25°C
PD
0.94
W
TA = +70°C
0.6
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
RθJA
137
°C/W
t<10s
82
°C/W
Total Power Dissipation (Note 6)
TA = +25°C
PD
2.0
W
TA = +70°C
1.3
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
RθJA
60
°C/W
t<10s
36
°C/W
Thermal Resistance, Junction to Case (Note 6)
RθJC
7.0
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
100
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current
IDSS
1.0
μA
VDS = 100V, VGS = 0V
Gate-Source Leakage
IGSS
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(th)
1.0
3.0
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS(ON)
99
122
mΩ
VGS = 10V, ID = 3.3A
104
133
VGS = 4.5V, ID = 3.0A
Forward Transfer Admittance
|Yfs|
4.4
S
VDS = 10V, ID = 3.3A
Diode Forward Voltage
VSD
0.7
1.0
V
VGS = 0V, IS = 3.3A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
870.7
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
40.8
pF
Reverse Transfer Capacitance
Crss
24.6
pF
Gate resistance
Rg
1.1
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = 4.5V)
Qg
7.0
nC
VDS = 50V, ID = 3.3A
Total Gate Charge (VGS = 10V)
Qg
14.9
nC
Gate-Source Charge
Qgs
3.3
nC
Gate-Drain Charge
Qgd
3.0
nC
Turn-On Delay Time
tD(on)
4.4
ns
VDD = 50V, VGEN = 10V,
RGEN = 6.0Ω, ID = 3.3A
Turn-On Rise Time
tr
2.3
ns
Turn-Off Delay Time
tD(off)
13.9
ns
Turn-Off Fall Time
tf
3.4
ns
Reverse Recovery Time
trr
22.4
ns
IS = 3.3A, dI/dt = 100A/μs
Reverse Recovery Charge
Qrr
19.7
nC
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. UIS in production with L = 1.43mH, TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.


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