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DMN10H170SFG-7 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMN10H170SFG-7 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 6 page POWERDI is a registered trademark of Diodes Incorporated DMN10H170SFG Document number: DS36147 Rev. 4 - 2 2 of 6 www.diodes.com August 2013 © Diodes Incorporated DMN10H170SFG Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C TC = +25°C ID 2.9 2.4 8.5 A t<10s TA = +25°C TA = +70°C ID 3.7 3.0 A Maximum Continuous Body Diode Forward Current (Note 6) IS 3.0 A Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 16 A Avalanche Current (Note 7) IAR 5.3 A Avalanche Energy (Note 7) EAR 20 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5) TA = +25°C PD 0.94 W TA = +70°C 0.6 Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 137 °C/W t<10s 82 °C/W Total Power Dissipation (Note 6) TA = +25°C PD 2.0 W TA = +70°C 1.3 Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 60 °C/W t<10s 36 °C/W Thermal Resistance, Junction to Case (Note 6) RθJC 7.0 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 100 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS — — 1.0 μA VDS = 100V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) 1.0 — 3.0 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 99 122 mΩ VGS = 10V, ID = 3.3A — 104 133 VGS = 4.5V, ID = 3.0A Forward Transfer Admittance |Yfs| — 4.4 — S VDS = 10V, ID = 3.3A Diode Forward Voltage VSD — 0.7 1.0 V VGS = 0V, IS = 3.3A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss — 870.7 — pF VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 40.8 — pF Reverse Transfer Capacitance Crss — 24.6 — pF Gate resistance Rg — 1.1 — Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = 4.5V) Qg — 7.0 — nC VDS = 50V, ID = 3.3A Total Gate Charge (VGS = 10V) Qg — 14.9 — nC Gate-Source Charge Qgs — 3.3 — nC Gate-Drain Charge Qgd — 3.0 — nC Turn-On Delay Time tD(on) — 4.4 — ns VDD = 50V, VGEN = 10V, RGEN = 6.0Ω, ID = 3.3A Turn-On Rise Time tr — 2.3 — ns Turn-Off Delay Time tD(off) — 13.9 — ns Turn-Off Fall Time tf — 3.4 — ns Reverse Recovery Time trr — 22.4 — ns IS = 3.3A, dI/dt = 100A/μs Reverse Recovery Charge Qrr — 19.7 — nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. UIS in production with L = 1.43mH, TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. |
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