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STUD417S Datasheet(PDF) 4 Page - SamHop Microelectronics Corp. |
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STUD417S Datasheet(HTML) 4 Page - SamHop Microelectronics Corp. |
4 / 8 page www.samhop.com.tw Aug,23,2010 4 -VGS, Gate-to-Source Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage -VSD, Body Diode Forward Voltage(V) Figure 8. Body Diode Forward Voltage Variation with Source Current -VDS, Drain-to-Source Voltage(V) Figure 9. Capacitance Qg, Total Gate Charge(nC) Figure 10. Gate Charge Rg, Gate Resistance( Ω) Figure 11. switching characteristics -VDS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area STU/D417S Ver 1.2 0.1 1 10 100 100 10 1 R DS (O N) Lim it VGS=-10V Single Pulse TA=25 C 36 30 24 18 12 6 0 24 6 8 10 0 ID=-21.5A 25 C 125 C 75 C 10 1 60 0 0.3 0.6 0.9 1.2 1.5 25 C 75 C 125 C Crs s Cs s o Cs s i 3600 3000 2400 1800 1200 600 0 10 15 20 25 30 0 5 10 8 6 4 2 0 010 20 30 40 50 60 70 80 V DS =-20V ID=-21.5A 100 10 60 1000 1 110 100 VDS=-20V,ID=-1A VGS=-10V TD(on) TD(off ) Tf Tr DC 0.1 1m s 100u s 10m s |
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