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DMN24H11DS-7 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMN24H11DS-7 Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 6 page  DMN24H11DS Document number: DS37092 Rev. 3 - 2 2 of 6 www.diodes.com April 2014 © Diodes Incorporated DMN24H11DS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 240 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 0.27 0.22 A Pulsed Drain Current (10μs pulse, duty cycle ≦1%) IDM 0.8 A Maximum Body Diode Continuous Current (Note 5) IS 0.8 A Peak diode recovery dv/dt dv/dt 6.0 V/ns Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5) PD 0.75 W (Note 6) 1.2 Thermal Resistance, Junction to Ambient (Note 5) RθJA 166 °C/W (Note 6) 104 Thermal Resistance, Junction to Case (Note 6) RθJC 35 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 240 V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS 100 nA VDS = 240V, VGS = 0V Gate-Body Leakage IGSS ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) 1.0 2.0 3.0 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS (ON) 3.7 11 Ω VGS = 10V, ID = 0.3A 4.0 12 VGS = 4.5V, ID = 0.2A Diode Forward Voltage VSD 0.7 1.2 V VGS = 0V, IS = 0.1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss 76.8 pF VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss 6.9 Reverse Transfer Capacitance Crss 4.1 Gate Resistance RG 17 Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge Qg 3.7 nC VDS = 192V, VGS = 10V, ID = 0.1A Gate-Source Charge Qgs 0.3 Gate-Drain Charge Qgd 2.1 Turn-On Delay Time tD(on) 4.8 nS VDS = 120V, ID = 0.1A, VGS = 10V, RG = 6.0Ω Turn-On Rise Time tr 4.7 Turn-Off Delay Time tD(off) 17.5 Turn-Off Fall Time tf 102.3 Reverse Recovery Time trr 45.6 nS VR = 100V, IF = 1.0A, di/dt = 100A/µs Reverse Recovery Charge Qrr 51.6 nC Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. |
Similar Part No. - DMN24H11DS-7 |
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Similar Description - DMN24H11DS-7 |
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