DMN31D5UFZ

Document number: DS36843 Rev. 2 - 2

2 of 6

www.diodes.com

June 2014

© Diodes Incorporated

DMN31D5UFZ

Characteristic

Symbol

Value

Units

Drain-Source Voltage

30

V

Gate-Source Voltage

±12

V

Continuous Drain Current (Note 5)

Steady

State

220

150

mA

Pulsed Drain Current (Note 6)

500

mA

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

Steady state

393

mW

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

318

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

30

—

—

V

Zero Gate Voltage Drain Current

—

—

100

nA

Gate-Source Leakage

—

—

±10

μA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

0.4

—

1.0

V

Static Drain-Source On-Resistance

—

—

1.5

Ω

—

—

2.0

—

—

3.0

—

—

4.5

—

2.8

—

Diode Forward Voltage

—

0.75

1.0

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

22.2

—

pF

f = 1.0MHz

Output Capacitance

—

2.9

—

pF

Reverse Transfer Capacitance

—

2.2

—

pF

Total Gate Charge

—

0.35

—

nC

Gate-Source Charge

—

0.05

—

nC

Gate-Drain Charge

—

0.02

—

nC

Turn-On Delay Time

—

3.1

—

ns

Turn-On Rise Time

—

2.0

—

ns

Turn-Off Delay Time

—

20

—

ns

Turn-Off Fall Time

—

6.9

—

ns

Notes:

5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.