FMMT489_15 datasheet(4/7 Pages) DIODES

Part #	FMMT489

Description	30V NPN MEDIUM POWER TRANSISTOR IN SOT23

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Manufacturer	DIODES [Diodes Incorporated]

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4 / 7 page

FMMT489

Document number: DS33090 Rev. 4 - 2

4 of 7

www.diodes.com

May 2013

FMMT489

A Product Line of

Diodes Incorporated

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

50

V

IC = 100 µA

Collector-Emitter Breakdown Voltage (Note 8)

BVCEO

30

V

IC = 10 mA

Emitter-Base Breakdown Voltage

BVEBO

7

V

IE = 100 µA

Collector-Base Cutoff Current

ICBO

100

nA

VCB = 30V

Emitter-Base Cutoff Current

IEBO

100

nA

VEB = 6V

Collector-Emitter Cutoff Current

ICES

100

nA

VCES= 30V

Static Forward Current Transfer Ratio (Note 8)

hFE

100

60

20

-

300

-

IC = 1mA, VCE = 2V

IC = 1A, VCE = 2V

IC = 2A, VCE = 2V

IC = 4A, VCE = 2V

Collector-Emitter Saturation Voltage

(Note 8)

VCE(sat)

300

600

mV

IC = 1A, IB = 100mA

IC = 2A, IB = 200mA

Base-Emitter Turn-On Voltage (Note 8)

VBE(on)

1.0

V

IC = 1A, VCE = 2V

Base-Emitter Saturation Voltage (Note 8)

VBE(sat)

1.1

V

IC = 1A, IB = 100mA

Output Capacitance

Cobo

10

pF

VCB = 10V, f = 1MHz

Transition Frequency

fT

150

MHz

VCE = 10V, IC = 50mA,

f = 100MHz

Note:

8. Measured under pulsed conditions. Pulse width

≤ 300µs. Duty cycle ≤ 2%

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