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HCP70R600S Datasheet(PDF) 2 Page - SemiHow Co.,Ltd. |
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HCP70R600S Datasheet(HTML) 2 Page - SemiHow Co.,Ltd. |
2 / 8 page Electrical Characteristics T J=25 C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units I S Continuous Source-Drain Diode Forward Current -- -- 7.3 A I SM Pulsed Source-Drain Diode Forward Current -- -- 22 V SD Source-Drain Diode Forward Voltage I S = 7.3 A, VGS = 0 V -- -- 1.3 V trr Reverse Recovery Time I S = 3.5 A, VGS = 0 V di F/dt = 100 A/ -- 250 -- Qrr Reverse Recovery Charge -- 2 -- uC On Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0 V, ID = 250 700 -- -- V I DSS Zero Gate Voltage Drain Current V DS = 700 V, VGS = 0 V -- -- 10 V DS = 560 V, TJ = 125 -- -- 100 I GSS Gate-Body Leakage Current V GS = 20 V, V DS = 0 V -- -- 100 Off Characteristics C iss Input Capacitance V DS = 25 V, VGS = 0 V, f = 1.0 MHz -- 500 -- C oss Output Capacitance -- 250 -- C rss Reverse Transfer Capacitance -- 7 -- R g Gate Resistance V GS = 0 V, VDS = 0 V, f = 1MHz -- 4 -- Dynamic Characteristics t d(on) Turn-On Time V DS = 350 V, ID = 7.3 A, R G = 25 -- 20 -- t r Turn-On Rise Time -- 20 -- t d(off) Turn-Off Delay Time -- 60 -- t f Turn-Off Fall Time -- 20 -- Q g Total Gate Charge V DS = 560 V, ID = 7.3 A, V GS = 10 V -- 16 -- nC Q gs Gate-Source Charge -- 4.0 -- nC Q gd Gate-Drain Charge -- 5.5 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics V GS Gate Threshold Voltage V DS = VGS, ID = 250 2.8 -- 4.2 V R DS(ON) Static Drain-Source On-Resistance V GS = 10 V, ID = 3.5 A -- 0.54 0.6 Notes : 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. I AS=2A, VDD=50V, RG=25 , Starting T J =25 C |
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