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HCS65R360S Datasheet(PDF) 3 Page - SemiHow Co.,Ltd. |
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HCS65R360S Datasheet(HTML) 3 Page - SemiHow Co.,Ltd. |
3 / 7 page Typical Characteristics Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 10 0 10 1 10 0 10 1 V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V * Notes : 1. 300us Pulse Test 2. T C = 25 oC V DS, Drain-Source Voltage [V] 048 12 16 20 24 0.0 0.2 0.4 0.6 0.8 1.0 V GS = 20V V GS = 10V Note : T J = 25 oC I D, Drain Current [A] 10 -1 10 0 10 1 0 1000 2000 3000 4000 5000 6000 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd * Note ; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 2468 10 0.1 10 -25 oC 25 oC * Notes : 1. V DS= 30V 2. 300us Pulse Test V GS, Gate-Source Voltage [V] 150 oC 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 25 oC * Notes : 1. V GS= 0V 2. 300us Pulse Test V SD, Source-Drain Voltage [V] 150 oC 0 5 10 15 20 25 0 2 4 6 8 10 12 V DS = 325V V DS = 130V V DS = 520V Note : I D = 11A Q G, Total Gate Charge [nC] |
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