Notes ;

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L=21mH, I

, Starting T

3. I

SD

DD

C

4. Pulse Test : Pulse Width

5. Essentially Independent of Operating Temperature

C unless otherwise specified

I

S

Continuous Source-Drain Diode Forward Current

--

--

9.0

A

I

SM

Pulsed Source-Drain Diode Forward Current

--

--

36

V

SD

Source-Drain Diode Forward Voltage

I

--

--

1.4

V

trr

Reverse Recovery Time

I

di

F

(Note 4)

--

660

--

Qrr

Reverse Recovery Charge

--

7.8

--

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

V

GS

Gate Threshold Voltage

V

2.5

--

4.5

V

R

DS(ON)

Static Drain-Source

On-Resistance

V

--

1.12

1.4

On Characteristics

BV

DSS

Drain-Source Breakdown Voltage

V

900

--

--

V

BV

DSS

/ T

J

Breakdown Voltage Temperature

Coefficient

I

, Referenced to25

--

0.99

--

V/

I

DSS

Zero Gate Voltage Drain Current

V

--

--

10

V

--

--

100

I

GSSF

Gate-Body Leakage Current,

Forward

V

--

--

10

I

GSSR

Gate-Body Leakage Current,

Reverse

V

--

--

-10

Off Characteristics

C

iss

Input Capacitance

V

f = 1.0 MHz

--

2550

3310

C

oss

Output Capacitance

--

180

240

C

rss

Reverse Transfer Capacitance

--

28

36

Dynamic Characteristics

t

d(on)

Turn-On Time

V

R

(Note 4,5)

--

150

310

t

r

Turn-On Rise Time

--

70

150

t

d(off)

Turn-Off Delay Time

--

270

550

t

f

Turn-Off Fall Time

--

180

370

Q

g

Total Gate Charge

V

V

(Note 4,5)

--

55

70

nC

Q

gs

Gate-Source Charge

--

16

--

nC

Q

gd

Gate-Drain Charge

--

21

--

nC

Switching Characteristics

Source-Drain Diode Maximum Ratings and Characteristics