DMN1260UFA_15 datasheet(3/6 Pages) DIODES

Part #	DMN1260UFA

Description	12V N-CHANNEL ENHANCEMENT MODE MOSFET

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Manufacturer	DIODES [Diodes Incorporated]

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3 / 6 page

DMN1260UFA

Document number: DS37122 Rev. 3 - 2

3 of 6

www.diodes.com

February 2015

DMN1260UFA

V

, DRAIN-SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristics

DS

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0

0.5

1

1.5

2

2.5

3

V

= 1.0V

GS

V

= 1.2V

GS

V

= 3.0V

GS

V

= 4.0V

GS

V

= 8.0V

GS

V

= 1.5V

GS

V

= 1.8V

GS

V

= 2.0V

GS

V

= 2.5V

GS

V

= 4.5V

GS

V

, GATE-SOURCE VOLTAGE (V)

GS

Figure 2 Typical Transfer Characteristics

0

0.5

1

1.5

2

2.5

V

= 5.0V

DS

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

I , DRAIN-SOURCE CURRENT (A)

D

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

0.1

0.15

0.2

0.25

0.3

0

0.2 0.4 0.6 0.8

1

1.2 1.4 1.6 1.8

2

V

= 1.8V

GS

V

= 2.5V

GS

V

= 4.5V

GS

I , DRAIN CURRENT (A)

D

Figure 4 Typical On-Resistance vs.

Drain Current and Temperature

0.08

0.1

0.12

0.14

0.16

0.18

0.2

0.22

0.24

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V

= 4.5V

GS

T , JUNCTION TEMPERATURE ( C)

Figure 5 On-Resistance Variation with Temperature

J



0.6

0.8

1

1.2

1.4

1.6

-50

-25

0

25

50

75

100

125

150

V

=

V

I = 50mA

GS

D

1.8

V

=

V

I = 200mA

GS

D

4.5

V

= .5V

I = 10mA

GS

D

1

V

= .5V

I = 100mA

GS

D

2

T , JUNCTION TEMPERATURE ( C)

Figure 6 On-Resistance Variation with Temperature

J



0

0.1

0.2

0.3

0.4

0.5

-50

-25

0

25

50

75

100

125

150

V

=

V

I = 50mA

GS

D

1.8

V

=

V

I = 10mA

GS

D

1.5

V

=

V

I = 100mA

GS

D

2.5

V

=

V

I = 200mA

GS

D

4.5

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