DMN2013UFDE-7 datasheet(3/6 Pages) DIODES

Part #	DMN2013UFDE-7

Description	20V N-CHANNEL ENHANCEMENT MODE MOSFET

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Manufacturer	DIODES [Diodes Incorporated]

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3 / 6 page

DMN2013UFDE

Document number: DS35701 Rev. 7 - 2

3 of 6

www.diodes.com

April 2013

DMN2013UFDE

0

0.5

1

1.5

2

V , DRAIN-SOURCE VOLTAGE (V)

Fig.1 Typical Output Characteristic

DS

0

5

10

15

20

25

30

0

5

10

15

20

V , GATE-SOURCE VOLTAGE

GS

Fig.2 Typical Transfer Characteristics

V

= 5.0V

DS

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

0

0.005

0.010

0.015

0.020

04

8

12

16

20

I , DRAIN-SOURCE CURRENT

D

Fig. 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

V

= 4.5V

GS

V

= 2.5V

GS

V

= 1.8V

GS

V

= 1.5V

GS

0

0.005

0.010

0.015

0.020

0

5

10

15

20

I , DRAIN CURRENT

D

Fig. 4 Typical On-Resistance vs.

Drain Current and Temperature

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V

= 4.5V

GS

0.6

0.8

1.0

1.2

1.4

1.8

1.6

50 -25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE ( C)

Fig. 5 On-Resistance Variation with Temperature

J



V

= 4.5V

I= 10A

GS

D

V=

V

I= 5A

GS

D

2.5

0

0.005

0.010

0.015

0.020

- 50

-25

0

255075

100

125

150

T , JUNCTION TEMPERATURE ( C)

Fig. 6 On-Resistance Variation with Temperature

J



V= .5V

I= 5A

GS

D

2

V=

V

I = 10A

GS

D

4.5

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