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PX511-2 Datasheet(PDF) 1 Page - Roithner LaserTechnik GmbH |
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PX511-2 Datasheet(HTML) 1 Page - Roithner LaserTechnik GmbH |
1 / 2 page 27.07.2011 PX511-2 1 of 1 PX511-2 TECHNICAL DATA Photodiode Chip die PX511-2 is a PIN PD of planar and front illuniated structure with P electrode on top and N electrode on bottom. Features • InGaAs structure • Spectral width: 1.0 – 1.65 µm • Active Area: Ø 300µm Absolute Maximum Ratings Item Symbol Value Unit Optical Current IPD 10 mA Forward Current IF 10 mA Reverse Current IR 10 mA ESD threshold >300 V Operating Temperature Topr -40 … +85 °C Storage Temperature Tstg -50 … +125 °C Specifications (TC=22°C) Item Value Unit Wavelength Range 1.00 .. 1.68 µm Active Area 300 µm Responsivity (VR=5V, λ=1.31µm, φE=100µw) >0.9 A/W Capacitance (VR=5V, φE=0, f=1MHz) 5-6 pF Dark Current (VR=5V, φE=0) 0.3 – 1.0 nA Forward Voltage (IF=1mA) 0.6 – 0.8 V Reverse Breakdown Voltage (ID=10µA, φE=0) 35 - 40 V Rising time (VR=5V ,RL=50Ω) ≤ 4 ns |
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