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2N3799 Datasheet(PDF) 1 Page - Central Semiconductor Corp

Part # 2N3799
Description  SILICON PNP TRANSISTORS
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Manufacturer  CENTRAL [Central Semiconductor Corp]
Direct Link  http://www.centralsemi.com
Logo CENTRAL - Central Semiconductor Corp

2N3799 Datasheet(HTML) 1 Page - Central Semiconductor Corp

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2N3798
2N3798A
2N3799
2N3799A
SILICON
PNP TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3798, 2N3799
series devices are silicon PNP epitaxial planar transistors
designed for low noise amplifier applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
2N3798
2N3798A
SYMBOL
2N3799
2N3799A
UNITS
Collector-Base Voltage
VCBO
60
90
V
Collector-Emitter Voltage
VCEO
60
90
V
Emitter-Base Voltage
VEBO
5.0
V
Continuous Collector Current
IC
50
mA
Power Dissipation
PD
360
mW
Power Dissipation (TC=25°C)
PD
1.2
W
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +200
°C
Thermal Resistance
JA
0.49
°C/mW
Thermal Resistance
JC
150
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=50V
10
nA
ICBO
VCB=50V, TA=150°C
10
μA
IEBO
VEB=4.0V
20
nA
BVCBO
IC=10μA (2N3798, 2N3799)
60
V
BVCBO
IC=10μA (2N3798A, 2N3799A)
90
V
BVCEO
IC=10mA (2N3798, 2N3799)
60
V
BVCEO
IC=10mA (2N3798A, 2N3799A)
90
V
BVEBO
IE=10μA
5.0
V
VCE(SAT)
IC=100μA, IB=10μA
0.20
V
VCE(SAT)
IC=1.0mA, IB=100μA
0.25
V
VBE(SAT)
IC=100μA, IB=10μA
0.70
V
VBE(SAT)
IC=1.0mA, IB=100μA
0.80
V
VBE(ON)
VCE=5.0V, IC=100μA
0.70
V
2N3798
2N3799
2N3798A
2N3799A
MIN
MAX
MIN
MAX
hFE
VCE=5.0V, IC=1.0μA
-
-
75
-
hFE
VCE=5.0V, IC=10μA
100
-
225
-
hFE
VCE=5.0V, IC=100μA
150
-
300
-
hFE
VCE=5.0V, IC=100μA, TA=-55°C
75
-
150
-
hFE
VCE=5.0V, IC=500μA
150
450
300
900
hFE
VCE=5.0V, IC=1.0mA
150
-
300
-
hFE
VCE=5.0V, IC=10mA
125
-
250
-
TO-18 CASE
R1 (22-September 2014)
www.centr a lsemi.com


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