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2N3810A Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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2N3810A Datasheet(HTML) 1 Page - Central Semiconductor Corp |
1 / 3 page 2N3810 2N3810A SILICON DUAL PNP TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3810 and 2N3810A are dual silicon PNP transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 50 mA Power Dissipation (One Die) PD 500 mW Power Dissipation (Both Dice) PD 600 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=50V 10 nA IEBO VEB=4.0V 20 nA BVCBO IC=10μA 60 V BVCEO IC=10mA 60 V BVEBO IE=10μA 5.0 V VCE(SAT) IC=100μA, IB=10μA 0.20 V VCE(SAT) IC=1.0mA, IB=100μA 0.25 V VBE(SAT) IC=100μA, IB=10μA 0.70 V VBE(SAT) IC=1.0mA, IB=100μA 0.80 V VBE(ON) VCE=5.0V, IC=100μA 0.70 V hFE VCE=5.0V, IC=10μA 100 hFE VCE=5.0V, IC=100μA 150 450 hFE VCE=5.0V, IC=500μA 150 450 hFE VCE=5.0V, IC=1.0mA 150 450 hFE VCE=5.0V, IC=10mA 125 fT VCE=5.0V, IC=500μA, f=30MHz 30 MHz fT VCE=5.0V, IC=1.0mA, f=100MHz 100 500 MHz Cob VCB=5.0V, IE=0, f=100kHz 4.0 pF Cib VBE=0.5V, IC=0, f=100kHz 8.0 pF hie VCE=10V, IC=1.0mA, f=1.0kHz 3.0 30 Ω hre VCE=10V, IC=1.0mA, f=1.0kHz 25 x10-4 hfe VCE=10V, IC=1.0mA, f=1.0kHz 150 600 hoe VCE=10V, IC=1.0mA, f=1.0kHz 5.0 60 μS NF VCE=10V, IC=100μA, RG=3.0kΩ, f=100Hz, BW=20Hz 7.0 dB TO-78 CASE R1 (4-June 2013) www.centr a lsemi.com |
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