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2N3867 Datasheet(PDF) 1 Page - Central Semiconductor Corp

Part # 2N3867
Description  SILICON PNP TRANSISTOR
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Manufacturer  CENTRAL [Central Semiconductor Corp]
Direct Link  http://www.centralsemi.com
Logo CENTRAL - Central Semiconductor Corp

2N3867 Datasheet(HTML) 1 Page - Central Semiconductor Corp

  2N3867_15 Datasheet HTML 1Page - Central Semiconductor Corp 2N3867_15 Datasheet HTML 2Page - Central Semiconductor Corp  
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2N3867
SILICON
PNP TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3867 is a silicon
PNP power transistor designed for high speed switching
and amplifier applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
4.0
V
Continuous Collector Current
IC
3.0
A
Peak Collector Current
ICM
10
A
Continuous Base Current
IB
0.5
A
Power Dissipation
PD
6.0
W
Power Dissipation (TA=25°C)
PD
1.0
W
Operating and Storage Junction Temperature
TJ, Tstg
-65 to +200
°C
Thermal Resistance
JC
29
°C/W
Thermal Resistance
JA
175
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=40V, TC=150°C
150
μA
ICEX
VCE=40V, VBE=2.0V
1.0
μA
BVCEO
IC=20mA
40
V
BVEBO
IE=100μA
4.0
V
VCE(SAT)
IC=500mA, IB=50mA
0.5
V
VCE(SAT)
IC=1.5A, IB=150mA
0.75
V
VCE(SAT)
IC=2.5A, IB=250mA
1.3
V
VBE(SAT)
IC=500mA, IB=50mA
1.0
V
VBE(SAT)
IC=1.5A, IB=150mA
0.9
1.4
V
VBE(SAT)
IC=2.5A, IB=250mA
2.0
V
hFE
VCE=1.0V, IC=500mA
50
hFE
VCE=2.0V, IC=1.5A
40
200
hFE
VCE=3.0V, IC=2.5A
25
hFE
VCE=5.0V, IC=3.0A
20
fT
VCE=5.0V, IC=100mA, f=20MHz
60
MHz
Cob
VCB=10V, IE=0, f=100kHz
120
pF
Cib
VEB=3.0V, IC=0, f=100kHz
1000
pF
td
VCC=30V, VBE(off)=0
35
ns
tr
IC=1.5A, IB1=150mA
65
ns
ts
VCC=30V, IC=1.5A
325
ns
tf
IB1=IB2=150mA
75
ns
TO-5 CASE
R0 (8-May 2013)
www.centr a lsemi.com


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