2N4058 2N4061

2N4059 2N4062

2N4060

SILICON

PNP TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N4058 series

devices are silicon PNP transistors designed for

low level, low noise (2N4058), low level, high gain

(2N4059, 2N4060, 2N4061, 2N4062) applications.

Recommended NPN complementary series is 2N3707

thru 2N3711.

MARKING: FULL PART NUMBER

TO-92 CASE

SYMBOL

UNITS

Collector-Base Voltage

VCBO

30

V

Collector-Emitter Voltage

VCEO

30

V

Emitter-Base Voltage

VEBO

6.0

V

Continuous Collector Current

IC

200

mA

Power Dissipation

PD

625

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=20V

100

nA

IEBO

VEB=6.0V

100

nA

BVCEO

IC=1.0mA

30

V

VCE(SAT)

IC=10mA, IB=0.5mA

0.7

V

VBE(ON)

VCE=5.0V, IC=1.0mA

0.5

1.0

V

NF

VCE=5.0V, IC=100μA, RG=5.0KΩ,

BW=15.7kHz (2N4058 only)

5.0

dB

2N4058

2N4059

2N4060

2N4061

2N4062

SYMBOL

TEST CONDITIONS

MIN MAX

MIN MAX

MIN MAX

MIN MAX

MIN MAX

hFE

VCE=5.0V, IC=100μA

100

400

-

-

-

-

-

-

-

-

hFE

VCE=5.0V, IC=1.0mA

-

-

45

660

45

165

90

330

180

660

hfe

VCE=5.0V, IC=100μA, f=1.0kHz

100

550

-

-

-

-

-

-

-

-

hfe

VCE=5.0V, IC=1.0mA, f=1.0kHz

-

-

45

800

45

250

90

450

180

800

R1 (13-March 2014)

www.centr a lsemi.com