DMN3110S

Document number: DS31561 Rev. 3 - 2

4 of 6

www.diodes.com

October 2013

© Diodes Incorporated

DMN3110S

-50

-25

0

25

50

75

100

125

150

T , AMBIENT TEMPERATURE (°C)

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

A

0

0.4

0.8

1.2

1.6

2

2.4

V , SOURCE-DRAIN VOLTAGE (V)

Fig. 8 Diode Forward Voltage vs. Current

SD

0

2

4

6

8

10

0

0.2

0.4

0.6

0.8

1

1.2

T= 25 C

A



V , DRAIN-SOURCE VOLTAGE (V)

Fig. 9 Typical Junction Capacitance

DS

10

100

1000

0

5

10

15

20

25

30

f = 1MHz

V , DRAIN-SOURCE VOLTAGE(V)

Fig. 10 Typical Drain-Source Leakage Current vs. Voltage

DS

0.1

1

10

100

1000

10000

0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30

T =150°C

A

T =125°C

A

T =85°C

A

T =25°C

A

T =-55°C

A

0

2

4

6

8

10

Q , TOTAL GATE CHARGE (nC)

Fig. 11 Gate-Charge Characteristics

g

02

4

6

8

10