DMN3190LDW

Document number: DS36192 Rev. 4 - 2

2 of 5

www.diodes.com

September 2013

© Diodes Incorporated

DMN3190LDW

Characteristic

Symbol

Value

Units

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Steady

State

1000

900

mA

T < 5s

1300

1000

mA

Maximum Continuous Body Diode Forward Current (Note 5)

0.5

A

Pulsed Drain Current (10µs pulse, duty cycle=1%)

2.0

A

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

0.32

W

0.19

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

395

°C/W

T < 5s

320

Total Power Dissipation (Note 6)

0.4

W

0.25

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

320

°C/W

T < 5s

250

Thermal Resistance, Junction to Case

143

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

30

—

—

V

Zero Gate Voltage Drain Current

—

—

1

μA

Gate-Source Leakage

—

—

±10

μA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

1.5

—

2.8

V

Static Drain-Source On-Resistance

—

122

190

mΩ

—

181

335

Forward Transfer Admittance

—

0.7

—

mS

Diode Forward Voltage

—

—

1.2

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

87

—

pF

f = 1.0MHz

Output Capacitance

—

17

—

pF

Reverse Transfer Capacitance

—

12

—

pF

Gate Resistance

—

69.8

—

Ω

—

0.9

—

nC

—

2.0

—

nC

Gate-Source Charge

—

0.3

—

nC

Gate-Drain Charge

—

0.3

—

nC

Turn-On Delay Time

—

4.5

—

ns

Turn-On Rise Time

—

8.9

—

ns

Turn-Off Delay Time

—

30.3

—

ns

Turn-Off Fall Time

—

15.6

—

ns

Notes:

5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.