DMN3016LDN_15 datasheet(4/7 Pages) DIODES

Part #	DMN3016LDN

Description	30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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4 / 7 page

DMN3016LDN

Document number: DS37307 Rev. 2 - 2

4 of 7

www.diodes.com

January 2015

DMN3016LDN

0

0.5

1

1.5

2

2.5

3

-50

-25

0

25

50

75

100

125

150

T

J, JUNCTION TEMPERATURE (℃)

Figure 7 Gate Theshold Variation vs Junction

Temperature

I

D = 1mA

I

D = 250µA

0

5

10

15

20

25

30

0

0.2

0.4

0.6

0.8

1

1.2

V

SD, SOURCE-DRAIN VOLTAGE (V)

Figure 8 Diode Forward Voltage vs Current

V

GS = 0V, TA = 25

oC

10

100

1000

10000

0

2

4

6

8

10

12

14

16

18

20

V

DS, DRAIN-SOURCE VOLTAGE (V)

Figure 9 Typical Junction Capacitance

f=1MHz

C

iss

C

oss

C

rss

0

1

2

3

4

5

6

7

8

9

10

0

5

10

15

20

25

Qg (nC)

Figure 10 Gate Charge

V

DS = 15V, ID =12A

0.01

0.1

1

10

100

0.1

1

10

100

V

DS, DRAIN-SOURCE VOLTAGE (V)

Figure 11 SOA, Safe Operation Area

T

J(Max)=150℃

T

A=25℃

V

GS=10V

Single Pulse

DUT on 1*MRP Board

R

DS(ON)

Limited

DC

P

W =10s

P

W =1s

P

W =100ms

P

W =10ms

P

W =1ms

P

W =100µs

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DMN3016LDN Datasheet(PDF) 4 Page - Diodes Incorporated

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