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DMN3016LDN Datasheet(PDF) 4 Page - Diodes Incorporated |
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DMN3016LDN Datasheet(HTML) 4 Page - Diodes Incorporated |
4 / 7 page DMN3016LDN Document number: DS37307 Rev. 2 - 2 4 of 7 www.diodes.com January 2015 © Diodes Incorporated DMN3016LDN 0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 T J, JUNCTION TEMPERATURE (℃) Figure 7 Gate Theshold Variation vs Junction Temperature I D = 1mA I D = 250µA 0 5 10 15 20 25 30 0 0.2 0.4 0.6 0.8 1 1.2 V SD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs Current V GS = 0V, TA = 25 oC 10 100 1000 10000 0 2 4 6 8 10 12 14 16 18 20 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance f=1MHz C iss C oss C rss 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 Qg (nC) Figure 10 Gate Charge V DS = 15V, ID =12A 0.01 0.1 1 10 100 0.1 1 10 100 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 11 SOA, Safe Operation Area T J(Max)=150℃ T A=25℃ V GS=10V Single Pulse DUT on 1*MRP Board R DS(ON) Limited DC P W =10s P W =1s P W =100ms P W =10ms P W =1ms P W =100µs |
Similar Part No. - DMN3016LDN_15 |
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Similar Description - DMN3016LDN_15 |
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