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HFP2N65U Datasheet(PDF) 3 Page - SemiHow Co.,Ltd. |
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HFP2N65U Datasheet(HTML) 3 Page - SemiHow Co.,Ltd. |
3 / 8 page Typical Characteristics Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 10 -1 10 1 V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V * Notes : 1. 300us Pulse Test 2. T C = 25 oC V DS, Drain-Source Voltage [V] 10 -1 10 0 10 1 0 100 200 300 400 500 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd * Note ; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 2468 10 0.1 10 -25 oC 25 oC * Notes : 1. V DS= 30V 2. 300us Pulse Test V GS, Gate-Source Voltage [V] 150 oC 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 25 oC * Notes : 1. V GS= 0V 2. 300us Pulse Test V SD, Source-Drain Voltage [V] 150 oC 02 46 0 2 4 6 8 10 V GS = 20V V GS = 10V Note : T J = 25 oC I D, Drain Current [A] 012 3 456 0 2 4 6 8 10 12 V DS = 325V V DS = 130V V DS = 520V Note : I D = 1.8A Q G, Total Gate Charge [nC] |
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