HFP8N60U datasheet(3/8 Pages) SEMIHOW

Part #	HFP8N60U

Description	Superior Avalanche Rugged Technology

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Typical Characteristics

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

0

5

10

15

20

25

0

2

4

6

8

10

12

V

DS = 300V

V

DS = 120V

V

DS = 480V

Note : I

D = 7.5A

Q

G, Total Gate Charge [nC]

04

8

12

16

20

0

1

2

3

V

GS = 20V

V

GS = 10V

Note : T

J = 25

oC

I

D, Drain Current [A]

10

-1

10

0

10

1

0

400

800

1200

1600

2000

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

* Note ;

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

10

0

10

1

10

-1

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

Bottom : 5.0 V

* Notes :

1. 300us Pulse Test

2. T

C = 25

oC

V

DS, Drain-Source Voltage [V]

2468

10

0.1

1

10

-25

oC

25

oC

* Notes :

1. V

DS= 30V

2. 300us Pulse Test

V

GS, Gate-Source Voltage [V]

150

oC

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.1

1

10

25

oC

* Notes :

1. V

GS= 0V

2. 300us Pulse Test

V

SD, Source-Drain Voltage [V]

150

oC

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