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SMB1W-850 Datasheet(PDF) 1 Page - Roithner LaserTechnik GmbH |
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SMB1W-850 Datasheet(HTML) 1 Page - Roithner LaserTechnik GmbH |
1 / 5 page 13.10.2011 SMB1W-850 1 of 5 SMB1W-850 TECHNICAL DATA High Power LED, SMD AlGaAs SMB1W-850 are AlGaAs High Power LEDs mounted on a cooper heat sink with a 5x5 mm SMD package and molded with epoxy resin. On forward bias, it emits a radiation of typical 430 mW at a peak wavelength of 850 nm. Specifications • Structure: AlGaAs, 1W high power chip • Peak Wavelength: typ. 850 nm • Optical Output Power: typ. 430 mW • Package SMD, PPA resin Lead frame die: silver plated on copper Lens: epoxy resin Absolute Maximum Ratings (Ta=25°C) Item Symbol Value Unit Power Dissipation PD 2500 mW Forward Current IF 1000 mA Pulse Forward Current * 1 IFP 4000 mA Reverse Voltage VR 5 V Thermal Resistance Rth 10 K/W Operating Temperature Topr -30 … +85 °C Storage Temperature Tstg -30 … +100 °C Soldering Temperature * 2 Tsol 255 °C * 1 duty = 1%, pulse width = 10 µs * 2 must be completed within 5 seconds (Unit: mm) Electro-Optical Characteristics Item Symbol Condition Min. Typ. Max. Unit Forward Voltage VF IF = 1 A - 2.1 2.5 V Pulsed Forward Current VFP IFP = 4 A - 4.2 5.5 V IF = 1 A 280 430 - Total Radiated Power PO IFP = 4 A - 1700 - mW IF = 1 A - 200 - Radiant Intensity IE IFP = 4 A - 800 - mW/sr Peak Wavelength λ P IF = 100 mA - 850 - nm Half Width Δλ IF = 100 mA - 45 - nm Viewing Half Angle Θ 1/2 IF = 100 mA - ±66 - deg. Rise Time tr IF = 100 mA - 15 - ns Fall Time tf IF = 100 mA - 10 - ns Total Radiated Power is measured by S3584-08 Radiant Intensity is measured by Tektronix J-6512 Notes: Do not view directly into the emitting area of the LED during operation! The above specifications are for reference purpose only and subjected to change without prior notice. |
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