WFF4N60 datasheet(3/6 Pages) WISDOM

Part #	WFF4N60

Description	600V N-Channel MOSFET

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Manufacturer	WISDOM [Wisdom technologies Int`l]

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3 / 6 page

HIGH VOLTAGE

N-Channel MOSFET

Rev.A0,August , 2010 |

3

Typical Characteristics

0.2

0.4

0.6

0.8

1.0

1.2

1.4

10

-1

10

0

10

1

150℃

※ Notes :

1. V

GS = 0V

2. 250μ s Pulse Test

25℃

V

SD

, Source-Drain voltage [V]

04

8

12

16

0

2

4

6

8

10

12

V

DS = 300V

V

DS = 120V

V

DS = 480V

※ Note : I

D

= 4.5A

Q

G, Total Gate Charge [nC]

024

68

10

0

1

2

3

4

5

6

V

GS = 20V

V

GS = 10V

※ Note : T

J

= 25℃

I

D

, Drain Current [A]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

10

-1

10

0

10

1

0

200

400

600

800

1000

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

※ Notes ;

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

10

-1

10

0

10

1

10

-2

10

-1

10

0

10

1

V

GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

5.0 V

Bottom :

4.5 V

※ Notes :

1. 250μ s Pulse Test

2. T

C = 25

℃

V

DS, Drain-Source Voltage [V]

2468

10

-1

10

0

10

1

150

o

C

25

o

C

-55

o

C

※ Notes :

1. V

DS

= 40V

2. 250μ s Pulse Test

V

GS, Gate-Source Voltage [V]

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