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HFS12N65U Datasheet(PDF) 2 Page - SemiHow Co.,Ltd. |
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HFS12N65U Datasheet(HTML) 2 Page - SemiHow Co.,Ltd. |
2 / 7 page Package Marking and Odering Information Device Marking Week Marking Package Packing Quantity RoHS Status HFS12N65U YWWX TO-220F Tube 50 Pb Free HFS12N65U YWWXg TO-220F Tube 50 Halogen Free Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L=10.3mH, I AS=12A, VDD=50V, RG=25 , Starting T J =25 C 3. I SD 12A, di/dt , V DD DSS , Starting TJ =25 C 4. Pulse Test : Pulse Width 5. Essentially Independent of Operating Temperature Electrical Characteristics T C=25 C unless otherwise specified I S Continuous Source-Drain Diode Forward Current -- -- 12 A I SM Pulsed Source-Drain Diode Forward Current -- -- 48 V SD Source-Drain Diode Forward Voltage I S = 12 A, VGS = 0 V -- -- 1.4 V trr Reverse Recovery Time I S = 12 A, VGS = 0 V di F/dt = 100 A/ (Note 4) -- 430 -- Qrr Reverse Recovery Charge -- 4.0 -- Symbol Parameter Test Conditions Min Typ Max Units V GS Gate Threshold Voltage V DS = VGS, ID = 250 2.5 -- 4.5 V R DS(ON) Static Drain-Source On-Resistance V GS = 10 V, ID = 6 A -- 0.67 0.78 On Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0 V, ID = 250 650 -- -- V I DSS Zero Gate Voltage Drain Current V DS = 650 V, VGS = 0 V -- -- 1 V DS = 520 V, TC = 125 -- -- 10 I GSS Gate-Body Leakage Current V GS = 30 V, V DS = 0 V -- -- 100 Off Characteristics C iss Input Capacitance V DS = 25 V, VGS = 0 V, f = 1.0 MHz -- 2100 2750 C oss Output Capacitance -- 170 220 C rss Reverse Transfer Capacitance -- 11 14.5 Dynamic Characteristics t d(on) Turn-On Time V DS = 325 V, ID = 12 A, R G = 25 (Note 4,5) -- 55 120 t r Turn-On Rise Time -- 45 100 t d(off) Turn-Off Delay Time -- 145 300 t f Turn-Off Fall Time -- 25 60 Q g Total Gate Charge V DS = 520V, ID = 12 A, V GS = 10 V (Note 4,5) -- 42 55 nC Q gs Gate-Source Charge -- 12 -- nC Q gd Gate-Drain Charge -- 12 -- nC Switching Characteristics Source-Drain Diode Maximum Ratings and Characteristics |
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