HRA82N10K datasheet(3/7 Pages) SEMIHOW

Part #	HRA82N10K

Description	Superior Avalanche Rugged Technology

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Manufacturer	SEMIHOW [SemiHow Co.,Ltd.]

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◎ SEMIHOW REV.A0,December 2014

Typical Characteristics

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

10

-1

10

0

10

1

0

1000

2000

3000

4000

5000

6000

7000

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

* Note ;

1. V

GS = 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

V

DS, Drain-Source Voltage [V]

0

20

40

60

80

100

120

0

2

4

6

8

10

12

V

DS = 80V

I

D = 30V

Q

G, Total Gate Charge [nC]

10

0

10

1

10

1

10

2

V

GS

Top :

15 V

10 V

8 V

7 V

6 V

5.5 V

5 V

Bottom : 4.5 V

* Notes :

1. 300us Pulse Test

2. T

C = 25

oC

V

DS, Drain-Source Voltage [V]

0

40

80

120

160

200

240

5.5

6.0

6.5

7.0

7.5

8.0

8.5

V

GS = 10V

∗ Note : T

J = 25

oC

I

D, Drain Current [A]

0

2

4

6

8

10

0.1

1

10

100

25

oC

* Notes :

1. V

DS= 20V

2. 300us Pulse Test

V

GS, Gate-Source Voltage [V]

175

oC

0.0

0.4

0.8

1.2

1.6

2.0

0.1

1

10

100

25

oC

* Notes :

1. V

GS= 0V

2. 300us Pulse Test

V

SD, Source-Drain Voltage [V]

175

oC

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