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DMP2006UFG

Document number: DS36802 Rev. 4 - 2

4 of 6

www.diodes.com

April 2015

© Diodes Incorporated

DMP2006UFG

0

0.002

0.004

0.006

0.008

0.01

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE ( C)

J



Figure 7 On-Resistance Variation with Temperature

V

= -4.5V

I =

A

GS

D

-15

V

=

5V

I =

A

GS

D

-42.

-10

0

0.2

0.4

0.6

0.8

1

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE (°C)

Figure 8 Gate Threshold Variation vs. Ambient Temperature

J

-I = 1mA

D

-I = 250µA

D

0

5

10

15

20

25

30

0

0.2

0.4

0.6

0.8

1

1.2

V

, SOURCE-DRAIN VOLTAGE (V)

Figure 9 Diode Forward Voltage vs. Current

SD

T = 150 C

A



T = 125 C

A



T = 85 C

A



T = 25 C

A



T = -55 C

A



100

1000

10000

100000

0

2

4

6

8

10

12

14

16

18

20

-V

, DRAIN-SOURCE VOLTAGE (V)

Figure 10 Typical Junction Capacitance

DS

f = 1MHz

0

2

4

6

8

10

0

30

60

90

120

150

Q , TOTAL GATE CHARGE (nC)

Figure 11 Gate-Charge Characteristics

g

V

= -10V

I = -20A

DS

D

0.01

0.1

1

10

100

0.01

0.1

1

10

100

-V

, DRAIN-SOURCE VOLTAGE (V)

Figure 12 SOA, Safe Operation Area

DS

R

Limited

DS(on)

DC

P

= 1s

W

P

= 100ms

W

P

= 10ms

W

P

= 1ms

W

P

= 100µs

W

T

= 150°C

T = 25°C

J(max)

A

V

= 4.5V

Single Pulse

GS

DUT on 1 * MRP Board

P

= 10s

W