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AM55-0016RTR Datasheet(PDF) 1 Page - Tyco Electronics |
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AM55-0016RTR Datasheet(HTML) 1 Page - Tyco Electronics |
1 / 4 page V2.00 Switched Low Noise Amplifier, 800-1000 MHz AM55-0016 M/A-COM Division of AMP Incorporated s North America: Tel. (800) 366-2266, Fax (800) 618-8883 s Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 s Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 www.macom.com AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice. * If specific reel size is required, consult factory for part number. Ordering Information Part Number Package AM55-0016 MSOP 8-Lead Plastic Package AM55-0016TR Forward Tape and Reel* AM55-0016RTR Reverse Tape and Reel* AM55-0016SMB Designer’s Kit MSOP-8 Features • High Gain State: - Gain: 16dB, Noise Figure: 1.6dB - Input IP3: +3dBm (@2.7V, 25mA) • Low Gain State: - Insertion Loss: 5dB, Input IP3: +24dBm • Single Supply: +2.7 to +5 VDC • Low Cost MSOP-8 Plastic Package • Adjustable current: 10 to 30 mA with external resistor Description M/A-COM’s AM55-0016 is a high dynamic range, switchable low noise amplifier in a low cost, MSOP 8-lead, surface mount, plastic package. The design utilizes a patented switching technique to provide a low insertion loss, high input IP 3 bypass state in parallel with the high gain, low noise state. The LNA employs external input matching to obtain optimum noise figure performance and operating frequency flexibility. The AM55-0016 also features flexible biasing to control the current consumption vs. dynamic range trade-off. Its current can be controlled over a range of 10 mA to 30 mA with an external resistor. Typical applications include receiver front ends in cellular band CDMA handsets. It is also useful as a switched gain block, buffer or driver in portable cellular systems. The AM55-0016 is fabricated using a low-cost 0.5-micron gate length GaAs MESFET process. The process features full passivation for increased performance and reliability. Switched Low Noise Amplifier 800 - 1000 MHz AM55-0016 -B- ID PIN 0.193 010 R 0 118 .020 020 0.0256 0 118 12° 4X 0 034 0 040 0 008 0 013 12° 4X 0.007 0 0215 3° RF IN RF OUT Functional Block Diagram Electrical Specifications 1 T A = +25°C, Z0=50Ω, F=881 MHz, PIN= -30 dBm, VDD=2.7 V, IDD=10 mA Parameter Test Conditions Units Min. Typ. Max. HIGH GAIN STATE, Voltage control = 2.7 volts Gain dB — 16 — Noise Figure dB — 1.6 1.8 Input IP3 I DD = 10 mA, VDD = 2.7V I DD = 25 mA, VDD = 2.7V dBm dBm — — -2 +3 — — Input VSWR / Output VSWR — — 2.0:1 Reverse Isolation dB — 32 — LOW GAIN STATE, Voltage control = 0 volts Insertion Loss I DD = 100 µA dB — 5 — Input IP3 dBm — +24 — Input VSWR — — 2.3:1 — Output VSWR — — 2.0:1 — 1. Refer to Typical Performance Data for performance versus frequency and bias. |
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