CMUT5551E

ENHANCED SPECIFICATION

SURFACE MOUNT

NPN SILICON TRANSISTOR

ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

hFE

VCE=5.0V, IC=1.0mA

120

hFE

VCE=5.0V, IC=10mA

120

300

hFE

VCE=5.0V, IC=50mA

75

hFE

VCE=10V, IC=150mA

25

fT

VCE=10V, IC=10mA, f=100MHz

100

300

MHz

Cob

VCB=10V, IE=0, f=1.0MHz

6.0

pF

Cib

VEB=0.5V, IC=0, f=1.0MHz

20

pF

hfe

VCE=10V, IC=1.0mA, f=1.0kHz

50

200

NF

VCE=5.0V, IC=200μA, RS=10Ω,

f=10Hz to 15.7kHz

8.0

dB

♦

♦

♦

♦

♦ Enhanced Specification

LEAD CODE:

1) Base

2) Emitter

3) Collector

MARKING CODE: 5C1

SOT-523 CASE - MECHANICAL OUTLINE

(Bottom View)

www.centr a lsemi.com

R1 (9-February 2010)